? 2018 kingbright. all rights reserved. spec no: dsao8900 / 1203001799 rev no: v.3a date: 01/03/2018 page 1 / 4 description z f3 made with gallium arsenide infrared emitting diodes features z 2.0 mm x 1.25 mm smd led, 0.75 mm thickness z mechanically and spectrally matched to the phototransistor z package: 2000 pcs / reel z moisture sensitivity level: 3 z rohs compliant applications z infrared illumination for cameras z machine vision systems z surveillance systems z industrial electronics z ir data transmission z remote control package dimensions selection guide APT2012F3C-P22 2.0 x 1.25 mm infrared emitting diode recommended soldering pattern (units : mm; tolerance : 0.1) part number emitting color (material) lens type po (mw/sr) @ 20ma [2] viewing angle [1] min. typ. 21/2 APT2012F3C-P22 infrared (gaas) water clear 1.2 3 *0.8 *2 160 notes: 1. all dimensions are in millimeters (inches). 2. tolerance is 0.1(0.004") unless otherwise noted. 3. the specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. the device has a single mounting surface. the device must be mounted according to the specifications. notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. radiant intensity / luminous flux: +/-15%. * radiant intensity value is traceable to cie127-2007 standards. confidential
? 2018 kingbright. all rights reserved. spec no: dsao8900 / 1203001799 rev no: v.3a date: 01/03/2018 page 2 / 4 electrical / optical characteristics at t a =25c APT2012F3C-P22 absolute maximum ratings at t a =25c parameter symbol emitting color value unit typ. max. wavelength at peak emission i f = 20ma peak infrared 940 - nm spectral bandwidth at 50% rel max i f = 20ma ? infrared 50 - nm capacitance c infrared 90 - pf forward voltage i f = 20ma v f [1] infrared 1.2 1.6 v reverse current (v r = 5v) i r infrared - 10 ua temperature coefficient of wavelength i f = 20ma, -10c t 85c tc infrared 0.3 - nm/c temperature coefficient of v f i f = 20ma, -10c t 85c tc v infrared -1.2 - mv/c parameter symbol unit power dissipation p d 90 mw reverse voltage v r 5 v junction temperature t j 115 c operating temperature t op -40 to +85 c storage temperature t stg -40 to +85 c dc forward current i f 50 ma peak forward current i fm [1] 1200 ma thermal resistance (junction / ambient) r th ja [2] 265 c/w thermal resistance (junction / solder point) r th js [2] 160 c/w value electrostatic dischar ge threshold (hbm) - 8000 v notes: 1. forward voltage: 0.1v. 2. wavelength value is traceable to cie127-2007 standards. 3. excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradat ion or premature failure. notes: 1. 1/100 duty cycle, 10 s pulse width. 2. r th ja ,r th js results from mounting on pc board fr4 (pad size ? 16 mm 2 per pad). 3. relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static e lectricity ? ref jedec/jesd625-a and jedec/j-std-033. confidential
? 2018 kingbright. all rights reserved. spec no: dsao8900 / 1203001799 rev no: v.3a date: 01/03/2018 page 3 / 4 technical data 0% 20% 40% 60% 80% 100% 550 600 650 700 750 800 850 900 950 1000 1050 t a = 25 c f3 wavelength (nm) relative intensity (a. u.) relative intensity vs. wavelength infrared tape specifications (units : mm) reel dimension (units : mm) reflow soldering profile for lead-free smd process 0.5 0.5 90 15 0 30 45 60 75 -15 -30 -45 -60 -75 -90 0.0 1.0 1.0 t a = 25 c spatial distribution APT2012F3C-P22 notes: 1. don't cause stress to the leds while it is exposed to high temperature. 2. the maximum number of reflow soldering passes is 2 times. 3. reflow soldering is recommended. other soldering methods are not recommended as they might cause damage to the product. 0 10 20 30 40 50 0.8 1.0 1.2 1.4 1.6 1.8 t a = 25 c forward voltage (v) forward current (ma) 0.0 0.5 1.0 1.5 2.0 2.5 0 1020304050 t a = 25 c forward current (ma) radiant intensity normalised at 20ma 0 10 20 30 40 50 60 70 -40-20 0 20406080100 ambient temperature (c) permissible forward current (ma) 0.0 0.5 1.0 1.5 2.0 2.5 -40-200 20406080100 ambient temperature (c) radiant intensity normalised at t a = 25 c forward current vs. forward voltage radiant intensity vs. forward current radiant intensity vs. ambient temperature forward current derating curve confidential
? 2018 kingbright. all rights reserved. spec no: dsao8900 / 1203001799 rev no: v.3a date: 01/03/2018 page 4 / 4 packing & label specifications APT2012F3C-P22 precautionary notes 1. the information included in this document reflects representative usage scenarios and is intended for technical reference on ly. 2. the part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. before production usage customer should refer to the latest datasheet for the updated specifications. 3. when using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. if customer usage exceeds the specified limits, kingbright will not be responsible for any subsequent issues. 4. the information in this document applies to typical usage in consumer electronics applications. if customer's application has special reliability requirements or have life-threatening liabilities, such as automotive or medical usage, please consult with kingbright representative for further assistance. 5. the contents and information of this document may not be reproduced or re-transmitted without permission by kingbright. 6. all design applications should refer to kingbright application notes available at http://www.kingbrightusa.com/applicationnotes confidential
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